Reference designs

Curated power-electronics reference designs from semiconductor vendors, with key specifications, test conditions and notes.

Part of Power Electronics Resources. Figures are as published by the vendor under the stated conditions. Always check against the source.

Design	Vendor / ID	Topology	Key specs	Semis
11 kW bidirectional CLLC DC-DC for EV charging and ESS (CoolSiC 1200 V / 1700 V)	Infineon REF-DAB11KIZSICSYS	cllc	11 kW · 800 V out · η 97.2 %	SiC
3 kW 50 V server / OCP V3 PSU: SiC totem-pole PFC + half-bridge LLC	Infineon EVAL_3KW_50V_PSU	totem-pole-pfc + half-bridge-llc	3 kW · 230 V AC in · 50 V out · η 97.5 %	SiC, Si
3.3 kW CCM totem-pole PFC with Si superjunction (CoolMOS CFD7) + Qoss/Qrr pre-charge circuit	Infineon EVAL_3K3W_TP_PFC_CC	totem-pole-pfc	3.3 kW	Si, SiC
25 kW full-SiC DC fast-charger platform: three-phase PFC + DAB	onsemi SEC-25KW-SIC-PIM-GEVK	dab	25 kW · 400–480 V AC in · 200–1000 V out	SiC
65 W USB-PD 3.0 + PPS adapter, QR flyback with integrated GaN switch (InnoSwitch3-Pro)	Power Integrations DER-626	flyback	65 W · 90–265 V AC in · 3.3–21 V out	GaN
15 kW three-phase three-level bidirectional active front end (SiC)	ST STDES-PFCBIDIR	3l-generic	15 kW · 400 V AC in · 800 V out	SiC
3.6 kW SiC totem-pole PFC with SCR-based inrush current limiter	ST STEVAL-DPSTPFC1	totem-pole-pfc	3.6 kW (input) · 85–264 V AC in · 400 V out · η 97.5 %	SiC, Si
10 kW bidirectional single-phase DAB for DC fast-charging (SiC)	TI TIDA-010054	dab	10 kW · 700–800 V DC in · 350–500 V out · η 98.7 %	SiC
10 kW three-phase three-level (T-type) SiC grid-tie inverter	TI TIDA-01606	t-type + 2l-vsi	10 kW · 800–1000 V DC in · 400 V out · η 98.5 %	SiC, IGBT
11 kW bidirectional three-phase three-level ANPC (GaN) inverter / PFC	TI TIDA-010210	anpc	11 kW · 400 V AC in · 800–1000 V out · η 98.5 %	GaN
6.6 kW bidirectional GaN OBC: 2-phase totem-pole PFC + CLLLC	TI PMP22650	totem-pole-pfc + clllc	6.6 kW · 210–240 V AC in · 250–450 V out · η 96.5 %	GaN
6.6 kW three-phase-interleaved CCM totem-pole PFC (SiC) for OBC	TI TIDA-01604	totem-pole-pfc	6.6 kW · 240 V AC in · η 98.5 %	SiC, Si
22 kW bidirectional full-bridge CLLC DC-DC (1200 V SiC)	Wolfspeed CRD-22DD12N	cllc	22 kW · 380–900 V DC in · 480–800 V out	SiC
40 A / 30 A SiC isolated gate driver eval with slew-rate control, DESAT, ASC and BIST (ADuM4177)	ADI EVAL-ADuM4177EBZ	single	40/30 A	SiC, IGBT
Automotive dual-channel SiC half-bridge gate driver with two-level turn-off	TI TIDA-01605	half-bridge	4/6 A · 15/-4 V · CMTI 100 kV/µs	SiC
Smart isolated SiC/IGBT gate driver with integrated-transformer bias supply (+18 / −4 V)	TI PMP23223	single	10/10 A · 18/-4 V	SiC, IGBT
Isolated shunt current + voltage measurement for motor drives (AMC130x ΔΣ + C2000 sinc3)	TI TIDA-00171	shunt-ds-modulator	current, voltage · shunt-ds-modulator · -250…250 mV
1 kW 48 V three-phase BLDC GaN inverter (EPC2206, STDRIVEG600)nrnd	EPC EPC9145	2l-vsi	60 V bus · 20 A rms · 1 kW	GaN
80 V three-phase BLDC pre-driver evaluation board (MP6539C)	MPS EV6539C-V-00A	2l-vsi	80 V bus	Si
48 V three-phase GaN inverter with in-line shunt phase-current sensing (INA240)	TI TIDA-00913	2l-vsi	12–60 V bus · 7 A rms	GaN
2-channel single-ended GaN class-D amplifier, 225 W/ch @ 4 Ω (CoolGaN + MERUS IRS20957)	Infineon EVAL_AUDAMP24	SE	2 × 225 W @ 4 Ω (1 % THD+N) · SE	GaN
2 × 260 W @ 4 Ω (1 % THD+N) BTL / 600 W PBTL class-D EVM (TPA3255)	TI TPA3255EVM	BTL	2 × 260 W @ 4 Ω (1 % THD+N) · BTL	Si